Performances comparison of Si and GaAs based resonant tunneling diodes

被引：2

作者：

Buccafurri, Emanuela ^{[1
]}

Clerc, Raphael ^{[2
]}

Calmon, Francis ^{[1
]}

Pala, Marco ^{[2
]}

Poncet, Alain ^{[1
]}

Ghibaudo, Gerard ^{[2
]}

机构：

[1] INSA Lyon, INL, 7 Av Jean Capelle, F-69621 Villeurbanne, France

[2] IMEP, LAHC, F-38016 Grenoble, France

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6 | 2009年 / 6卷 / 06期

关键词：

D O I：

10.1002/pssc.200881525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On the basis of an original, physically based analytical model, I-V characteristic of the resonant tunneling diode structure (RTD) has been studied. Comparing AlAs/GaAs heterostructure RTD and Si-based RTD of same dimensions, it turns out that the performances of GaAs devices are superior. However, similar performances can be achieved in the Hf0(2)/Si RTD, by a strong reduction in barrier runnel thickness and width well. In conclusion, an extreme shrinking of Hf0(2)/Si structure dimensions can offer, in principle, RTD performances comparable to conventional AlAs/GaAs heterostructures. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1408 / +

页数：2

共 50 条

[1] Intrinsic Cut Off Frequency of Si and GaAs Based Resonant Tunneling Diodes
Buccafurri, E.
Clerc, R.
Calmon, F.
Pala, M.
Poncet, A.
Ghibaudo, G.
ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON, 2009, : 91 - +
[2] Structural Optimization of the GaAs-based Resonant Tunneling Diodes
Zhang, Binzhen
Guo, Hao
Tang, Jun
Liu, Jun
Wang, Jie
ADVANCES IN POWER AND ELECTRICAL ENGINEERING, PTS 1 AND 2, 2013, 614-615 : 1179 - 1184
[3] A GaAs pressure sensor with frequency output based on resonant tunneling diodes
Mutamba, K
Flath, M
Sigurdardóttir, A
Vogt, A
Hartnagel, HL
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1999, 48 (06) : 1333 - 1338
[4] Development of a novel GaAs micromachined accelerometer based on resonant tunneling diodes
Li, Bo
Zhang, Wendong
Xie, Bin
Xue, Chenyang
Xiong, Jijun
SENSORS AND ACTUATORS A-PHYSICAL, 2008, 143 (02) : 230 - 236
[5] A GAAS PRESSURE SENSOR-BASED ON RESONANT-TUNNELING DIODES
FOBELETS, K
VOUNCKX, R
BORGHS, G
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1994, 4 (03) : 123 - 128
[6] A GaAs acoustic sensor with frequency output based on resonant tunneling diodes
Zhang, Binzhen
Wang, Jian
Xue, Chenyang
Zhang, Wendong
Xiong, Jijun
SENSORS AND ACTUATORS A-PHYSICAL, 2007, 139 (1-2) : 42 - 46
[7] Si/SiGe electron resonant tunneling diodes
Paul, DJ
See, P
Zozoulenko, IV
Berggren, KF
Kabius, B
Holländer, B
Mantl, S
APPLIED PHYSICS LETTERS, 2000, 77 (11) : 1653 - 1655
[8] Comparison of bistable circuits based on resonant-tunneling diodes
González, AF
Mazumder, P
16TH INTERNATIONAL CONFERENCE ON VLSI DESIGN, PROCEEDINGS, 2003, : 493 - 498
[9] IMPROVED DESIGN OF ALAS/GAAS RESONANT TUNNELING DIODES
CHENG, P
HARRIS, JS
APPLIED PHYSICS LETTERS, 1990, 56 (17) : 1676 - 1678
[10] Si-based resonant inter- and intraband tunneling diodes
Eberl, K
Duschl, R
Schmidt, OG
Denker, U
Haug, R
JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 770 - 776

← 1 2 3 4 5 →