Terahertz characterization of semiconductor alloy AlInN: negative imaginary conductivity and its meaning

被引:18
|
作者
Kang, Ting-Ting [1 ]
Yamamoto, Masatomo [1 ]
Tanaka, Mikiyasu [1 ]
Hashimoto, Akihiro [1 ]
Yamamoto, Akio [1 ]
Sudo, Ryota [2 ]
Noda, Akifumi [2 ]
Liu, D. W. [2 ]
Yamamoto, Kohji [2 ]
机构
[1] Univ Fukui, Grad Sch Engn, Dept Elect & Elect Engn, Fukui 9108507, Japan
[2] Univ Fukui, Res Ctr Dev Far Infrared Reg, Fukui 9108507, Japan
关键词
FILMS; GAN;
D O I
10.1364/OL.34.002507
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Through terahertz time-domain spectroscopy, negative imaginary conductivity is observed in In-rich AlInN film grown by metal-organic chemical-vapor deposition for frequencies from 0.2 to 2.0 THz. This non-Drude behavior is explained based on the electron back-scattering theory of Smith [Phys. Rev. B 65, 115206 (2002)]. Comparing with binary semiconductor InN, potential fluctuations produced by composition inhomogeneity and alloy scattering of carriers make In-rich AlInN alloy easier to be subjected to non-Drude behavior in electrical performance. (C) 2009 Optical Society of America
引用
收藏
页码:2507 / 2509
页数:3
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