Amorphous Oxide Semiconductor Thin-Film Transistors: Performance & Manufacturability for Display Applications

被引：0
|
作者：
Wager, John F. [1 ]
机构：
[1] Oregon State Univ, Sch EECS, Corvallis, OR 97331 USA
来源：
2009 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS, VOL XL, BOOKS I - III | 2009年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Various types of metal-oxide thin-film transistors (TFTs) are tinder development for next-generation display applications. We advocate the use of amorphous oxide semiconductors (AOSs) for this purpose. The objective of this presentation is to: (i) briefly compare the A OS approach to that of the binary metal-oxide TFT strategy, and (ii) assess AOS channel layer materials options in terms of their performance and manufacturability in the context of pertinent economic, environmental, and technology constraints.
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页码：181 / 183
页数：3
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