Mathematical simulation of soft baking in photoresist processing

被引:2
|
作者
Hsu, JP [1 ]
Huang, SW
Tseng, S
机构
[1] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan
[2] Tamkang Univ, Dept Math, Tamsui 25137, Taiwan
关键词
D O I
10.1149/1.1393458
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The soft-baking procedure in photoresist processing is investigated theoretically. A Landau transformation coupled with a finite-difference scheme is adopted to solving the moving-boundary problem under consideration. The experimental data of Shipley SPR5110LA. m-p cresol novolak, poly(methyl methacrylate), Shipley UVIII, and Shipley SNR200 photoresists reported in the literature are analyzed to justify the applicability of the model derived. We show that the concentration dependence of the diffusivecular ty of solvent can have a significant influence on the soft-baking procedure. The rate of transfer of solvent is controlled by the molecular diffusion of solvent in a film. (C) 2000 The Electrochemical Society. S0013-4651 (99)07-030-5. All rights reserved.
引用
收藏
页码:1920 / 1924
页数:5
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