Role of the additive of oxygen at plasma etching of silicon

被引：0
|
作者：
Bogomolov, BK [1 ]
机构：
[1] Novosibirsk State Univ, Novosibirsk 630090, Russia
来源：
2002 6TH INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRONIC INSTRUMENT ENGINEERING PROCEEDINGS, VOL 1 | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The research of process of plasma etching of silicon in plasma CF2Cl2/O-2 on the equipment "Plasma-600" is carried out. The shift of a maximum of dependence of speed of etching in a direction of the greater contents O-2 in an initial mix for plasma CF2Cl2/O-2 in comparison with plasma CF4/O-2 and SF6/O-2 contacts to presence of chlorine.
引用
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页码：33 / 35
页数：3
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