Influence of Hydrogen Plasma on the Defect Passivation of Polycrystalline Si Thin Film Solar Cells

被引：35

作者：

Gorka, Benjamin ^{[1
]}

Rau, Bjoern ^{[1
]}

Dogan, Pinar ^{[1
]}

Becker, Christiane ^{[1
]}

Ruske, Florian ^{[1
]}

Gall, Stefan ^{[1
]}

Rech, Bernd ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie HZB, D-12489 Berlin, Germany

来源：

PLASMA PROCESSES AND POLYMERS | 2009年 / 6卷

关键词：

hydrogen passivation; plasma treatment; polycrystalline silicon; solar cells; thin films; SILICON; CRYSTALLIZATION;

D O I：

10.1002/ppap.200930202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogen passivation (HP) of polycrystalline silicon (poly-Si) thin film solar cells was performed in a parallel plate radio-frequency (rf) plasma setup. The influence of hydrogen pressure p and electrode gap d on breakdown voltage V-brk is presented showing that the minimum in V-brk shifts with higher pressures towards higher p . d values. Cell test structures provided by CSG Solar AG were used to examine the influence of p and d on the open circuit voltage V-OC. The highest V-OC's were achieved for p . d values that correspond to a minimum in V-brk. HP strongly improved the V-OC. After the hydrogen plasma treatment the V-OC improved significantly by a factor of 2 and amounted to 450 mV. Optimized parameters were then applied to different poly-Si solar cells prepared by electron beam evaporation.

引用

页码：S36 / S40

页数：5

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