An Integrated ISFET Sensor Array

被引：60

作者：

Nakazato, Kazuo ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Elect Engn & Comp Sci, Chikusa Ku, Aichi 4648603, Japan

来源：

SENSORS | 2009年 / 9卷 / 11期

基金：

日本科学技术振兴机构;

关键词：

ISFET; biosensor array; source-drain follower; CMOS biotechnology; FIELD-EFFECT TRANSISTOR; SOURCE-DRAIN FOLLOWER; CAT-CVD METHOD; SILICON-NITRIDE; PHOTOSYSTEM-I; BIOSENSOR ARRAY; DNA DETECTION; CHIP; DEVICES; TEMPERATURE;

D O I：

10.3390/s91108831

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A monolithically integrated ISFET sensor array and interface circuit are described. A new high-density, low-power source-drain follower was developed for the sensor array. ISFETs were formed by depositing Au/Ti extended-gate electrodes on standard MOSFETs, then thin silicon nitride layers using catalytic chemical vapor deposition and/or SU-8 protective layers were formed on the extended-gate electrodes. Applications for the array include: (1) pH detection by statistical distribution observing time and space fluctuations; (2) DNA detection using thiol-modified or silane-coupled oligonucleotides; (3) bio-image sensing by converting photons to electrons using Photosystem I of Thermosynechococcus elongatus, and sensing the converted electric charges by ISFETs.

引用

页码：8831 / 8851

页数：21

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