Self-organized dots of GaN:Mn gown by molecular beam epitaxy

被引：0

作者：

Kuroda, S. ^{[1
,2
]}

Marcet, S. ^{[1
,2
]}

Halley, D. ^{[1
]}

Ferrand, D. ^{[1
]}

Cibert, J. ^{[3
]}

Mariette, H. ^{[1
]}

Yamamoto, S. ^{[4
]}

Sakai, T. ^{[4
]}

Ohshima, T. ^{[4
]}

Itoh, I. ^{[4
]}

机构：

[1] Univ Grenoble 1, Spectrometrie Phys Lab, CEA CNRS Grp Nanophys & Semicond, F-38054 Grenoble, France

[2] Univ Tsukuba, Inst Sci Mat, Tsukuba, Ibaraki 3058573, Japan

[3] CNRS, Lab Louis Neel, F-38042 Grenoble, France

[4] Japan Atom Energy Agcy, Takasaki, Gumma 3701292, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11 | 2006年 / 3卷 / 11期

关键词：

D O I：

10.1002/pssc.200671601

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Self-organized dots of Mn-doped GaN were grown on AlN by plasma-assisted molecular beam epitaxy. The growth was performed in the nitrogen-rich growth regime with the addition of small amount of Mn flux. The in-situ surface observation using reflection high energy electron diffraction (RHEED) and the ex-situ examination using atomic force microscope (AFM) revealed that the dot formation was observed only in the case where the amount of Mn flux was small. The estimate of Mn composition using particle induced X-ray emission (PIXE) experiment showed that the Mn composition in the dots layer was much higher than in thick (Ga,Mn)N layers grown with the same amount of Mn flux. The maximum Mn composition for the high-density dot formation was about x = 0.01. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3967 / +

页数：2

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