A dual-channel IEGT

被引：3
|
作者：
Huang, S
Amaratunga, GAJ
Udrea, F
Sheng, K
Waind, P
Coulbeck, L
Taylor, P
机构：
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
[2] Dynex Semicond, Lincoln LN6 3LF, England
来源：
MICROELECTRONICS JOURNAL | 2001年 / 32卷 / 09期
关键词：
IEGT; IGBT; trench technology; voltage drop; energy loss;
D O I：
10.1016/S0026-2692(01)00054-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Dual Channel Injection Enhanced Gate Transistor (DC-IEGT) device structure which allows for an additional p-channel to collect holes during turn-off is proposed and analysed in detail by extensive two-dimensional simulations. The DC-IEGT shows overall superior performance over the conventional IEGT and IGBT and is characterised by low on-state voltage drop, fast switching and large SOA. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：755 / 761
页数：7
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