Structure of the liquid-vapor interfaces of Ga, In and the eutectic Ga-In alloy -: an ab initio study

被引:15
|
作者
Gonzalez, D. J. [1 ]
Gonzalez, L. E. [1 ]
机构
[1] Univ Valladolid, Dept Fis Teor Atom & Opt, E-47011 Valladolid, Spain
关键词
D O I
10.1088/0953-8984/20/11/114118
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report the results of ab initio molecular dynamics simulations for the liquid-vapor interface of the liquid metals Ga, In and the eutectic binary alloy Ga-In (16.5% In) for which experimental data are available. The study was performed by using samples of 3000 particles in a slab geometry with periodic boundary conditions. In those systems, the total ionic density distributions along the normal to the interface display some layering and in the case of the Ga-In alloy there appears a highly enriched layer of the lower surface tension component located outermost at the interface. The results are compared with the available experimental data.
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页数:6
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