Detrended fluctuation analysis of the soft breakdown current

被引：1
|
作者：
Bandiera, L
Cester, A
Paccagnella, A
Ghidini, G
Bloom, I
机构：
[1] Univ Padua, Dipartimento Elettron & Informat, I-35131 Padua, Italy
[2] Ist Nazl Fis Mat, INFM, Unita Padova, I-35131 Padua, Italy
[3] STMicroelect, I-20041 Agrate Brianza, Italy
[4] Saifuni Semicond, Netanya, Israel
来源：
MICROELECTRONIC ENGINEERING | 2001年 / 59卷 / 1-4期
关键词：
soft breakdown; oxide reliability; noise in MOS devices; electrical stress;
D O I：
10.1016/S0167-9317(01)00643-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have addressed the problem of the gate current fluctuations after soft breakdown in thin gate oxides, mainly focused on the intrinsic instability of SB conductance. We found that heavily degraded oxides exhibit large instability and more complex fluctuations. Finally we have developed a model to describe the gate distribution of the gate current fluctuations by taking in account such conductance instability. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：49 / 53
页数：5
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