Defects created by multi-energy he implantation of silicon at high temperatures

Multi-energies He implantations have been performed in (100) silicon using selected fluences to get the amount of damage constant on a large plateau. Ion implantation-induced defects have been studied by TEM. Both the amount and the microstructure of defects have been found to be strongly dependent on the implantation order. The cavity formation occurs only in the regions of damage overlapping indicating the formation of nucleation sites by previous implantations. As for the interstitial type defects, the observed state of growth of the {113}'s is dependent on the implantation order but in any case only rod-like defects and ribbon-like defects are observed and no dislocation loops are formed.