Determination of the critical layer thickness of GaAs/InGaAs strained quantum wells by scanning near-field optical spectroscopy

被引：0
|
作者：
Ohizumi, Y [1 ]
Tsuruoka, T
Ushioda, S
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Corp, JST, CREST, Sendai, Miyagi 9808577, Japan
[3] RIKEN, Photodynam Res Ctr, Sendai, Miyagi 9800845, Japan
来源：
COMPOUND SEMICONDUCTORS 2001 | 2002年 / 170期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have determined the critical layer thickness of GaAs/InGaAs strained quantum well structures by means of photoluminescence (PL) microscopy using the scanning near-field optical microscope. Reduction of the PL intensity appears as dark lines in the PL image. These dark lines are attributed to misfit dislocations formed at the GaAs/InGaAs interfaces. The density of dark lines in the <110> directions as a function of the layer thickness shows the existence of two critical layer thicknesses for the formation of misfit dislocations.
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页码：449 / 454
页数：6
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