Competitive Interaction between Segregation Gettering and Surface Precipitation of Nickel in p/p+ Silicon Epitaxial Wafers

被引：1

作者：

Torigoe, Kazuhisa ^{[1
]}

Ono, Toshiaki ^{[1
]}

Nakamura, Kozo ^{[2
]}

机构：

[1] SUMCO Corp, Div Technol, Adv Evaluat & Technol Dev Dept, Yamashiro Cho, Imari, Saga 8494256, Japan

[2] Okayama Prefectural Univ, Dept Commun Engn, Okayama 7191197, Japan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2015年 / 4卷 / 09期

关键词：

CZOCHRALSKI SILICON; METALLIC IMPURITIES; NI CONTAMINATION; DOPED SILICON; COPPER; SOLUBILITY; DEFECTS; DIFFUSION;

D O I：

10.1149/2.0201509jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The segregation gettering mechanism for nickel in p/p(+) silicon epitaxial wafers is investigated using heavily boron-doped substrates with different resistivities in the range of 7 to 10 m Omega cm. It is found that the segregation gettering becomes active when the nickel contamination level is lower than 1 x 10(13) cm(-2), resulting in the decrease of the nickel precipitation at the surface of epitaxial layers when the resistivity of p(+) substrates decreases. The gettering model based on the enhanced solubility of nickel in p(+) substrates could explain the competitive interaction between the segregation effect and the nickel precipitation at the surface below 500 degrees C during the cooling process after heat treatments. It is suggested by these results that the gettering effect is useful for the low temperature process in the fabrication of a future device. (C) 2015 The Electrochemical Society. All rights reserved.

引用

页码：Q110 / Q114

页数：5

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