Molecular dynamics simulations of Si/Ge cluster condensation

The condensation of Si, Ge, and Si/Ge nanoclusters in an Ar atmosphere was simulated using molecular dynamics simulations. The clusters formed were made with different Si-to-Ge ratios ranging from 100% Si to 100% Ge. The results indicate that Ge atoms have a tendency to segregate to the surface of the clusters, although the magnitude of this effect depends on the potential used for the simulations. Also, there is a random tendency for the atoms to form non-spherical clusters; this tendency grows with the increased concentration of Ge atoms. (C) 2009 Elsevier B.V. All rights reserved.