Influence of substrate misorientation on properties of InGaN layers grown on freestanding GaN

被引：17

作者：

Franssen, G. ^{[1
]}

Suski, T. ^{[1
]}

Krysko, M. ^{[1
]}

Lucznik, B. ^{[1
]}

Grzegory, I. ^{[1
]}

Krukowski, S. ^{[1
]}

Khachapuridze, A. ^{[1
]}

Czernecki, R. ^{[2
]}

Grzanka, S. ^{[2
]}

Mensz, P. ^{[1
]}

Leszczynski, M. ^{[1
,2
]}

Porowski, S. ^{[1
]}

Albrecht, M. ^{[3
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys Unipress, Sokolowska 29-37, PL-01142 Warsaw, Poland

[2] TopGaN Ltd, Warsaw, Poland

[3] Inst Kristallzuchtung, D-12489 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

关键词：

D O I：

10.1002/pssc.200778409

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of GaN substrate misorientation on properties of InxGa1-xN epilayers (0.05 < x < 0.1) has been examined. X-ray Bragg reflection, photoluminescence (PL) peak energy and full width at half maximum were analyzed. Higher misorientation angles with respect to the c-plane (up to 2.30 degrees) give lower average In incorporation in InGaN layers, causing a blue shift of the PL peak energy, In contrast with expectations, higher misorientation (i.e., lower In, content) leads to higher alloy disorder. This is reflected in the spectral width of PL lines and in a well-pronounced S-shape of PL vs. temperature for more misoriented samples. The obtained results clearly show that the misorientation of the substrate can be used as a parameter for the growth of InGaN layers, enabling the control of crucial light emitting device parameters such as emission energy and In fluctuation effects.

引用

页码：1485 / +

页数：2

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