Four-Wave Mixing in GaN Waveguides

被引：0

作者：

Munk, Dvir ^{[1
,2
]}

Katzman, Moshe ^{[1
,2
]}

Westreich, Ohad ^{[3
,4
]}

Bin Nun, Moarn ^{[4
]}

Lior, Yedidya ^{[4
]}

Sicron, Noam ^{[3
]}

Paltiel, Yossi ^{[4
]}

Zadok, Avi ^{[1
,2
]}

机构：

[1] Bar Ilan Univ, Fac Engn, IL-5290002 Ramat Gan, Israel

[2] Bar Ilan Univ, Inst Nanotechnol & Adv Mat, IL-5290002 Ramat Gan, Israel

[3] Soreq NRC, Appl Phys Div, Solid State Phys Dept, IL-81800 Yavne, Israel

[4] Hebrew Univ Jerusalem, Appl Phys Dept, IL-91904 Jerusalem, Israel

来源：

2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Four-wave mixing at 1550 nm wavelength is demonstrated in a GaN ridge waveguide for the first time. A nonlinear coefficient of 1.6 +/- 0.45 [Wxm](-1) is measured. The nonlinear parameter of GaN is estimated as 3.4 +/- 1e-18 [m(2)/W].

引用

页数：2

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