PAC investigations of radiation damage annealing in 111In implanted Zno

被引:13
|
作者
Dogra, R. [1 ]
Byrne, A. P. [2 ,3 ]
Ridgway, M. C. [4 ]
机构
[1] Beant Coll Engn & Technol, Gurdaspur 143521, India
[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Nucl Phys, Canberra, ACT 0200, Australia
[3] Australian Natl Univ, Fac Sci, Dept Phys, Canberra, ACT 0200, Australia
[4] Australian Natl Univ, Dept Elect Mat Engn, RSPhysSE, Canberra, ACT 0200, Australia
关键词
ZnO; Recoil-implantation; Radiation damage; Perturbed angular correlation; ELECTRIC-FIELD GRADIENTS; ZINC-OXIDE; SEMICONDUCTORS; INDIUM; PARAMETERS; IMPURITIES; STATE;
D O I
10.1016/j.optmat.2009.01.014
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The structural and electronic environment about implanted radioactive (111)In(->(111)Cd) probe atoms as a function of annealing temperature in a single crystal of ZnO(0001) has been monitored on an atomic scale using perturbed angular correlation technique, a nuclear hyperfine method. This technique is based upon the hyperfine interaction of the nuclear electric quadrupole moment or magnetic moment of the probes, respectively, with the electric field gradient or magnetic hyperfine field arising from the extranuclear electronic charges and spin distributions. The probe atoms (111)In were recoil-implanted at room temperature following heavy-ion nuclear reactions. The electric quadrupole interaction was measured at room temperature for as-implanted and annealed samples. The thermal annealing in ambient nitrogen up to 1000 degrees C showed a progressive reduction of disorder around the probe atom as evidenced via continual decrease in width of the distribution of quadrupole interaction frequencies. Present measurements suggested that annealing at 800 degrees C for 30 min in flowing nitrogen is enough to produce an optimum recovery of crystallinity. After annealing of radiation damage at 1000 degrees C we observed an axially symmetric electric field gradient which is characterized by the unique quadrupole interaction frequency of 30.6(3) MHz and a frequency distribution of width nearly zero. The observed electric field gradient was attributed to substitutional incorporation of probe atoms at cation-sites of ZnO. In contrast to annealing in ambient nitrogen at 1000 degrees C, air annealing of (111)In implanted ZnO samples revealed change in local stoichiometry about probe atoms which is attributed to the internal oxidation of the indium probes. The measured electric field gradient and asymmetry parameter at cation-sites of ZnO have been compared with theoretical calculations using a simple point charge model. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1443 / 1447
页数:5
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