Metal-Assisted Chemical Etching Using Silica Nanoparticle for the Fabrication of a Silicon Nanowire Array

被引：22

作者：

Kato, Shinya ^{[1
]}

Watanabe, Yuya ^{[1
]}

Kurokawa, Yasuyoshi ^{[1
]}

Yamada, Akira ^{[1
,2
]}

Ohta, Yoshimi ^{[3
]}

Niwa, Yusuke ^{[3
]}

Hirota, Masaki ^{[3
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Photovolta Res Ctr PVREC, Meguro Ku, Tokyo 1528552, Japan

[3] Nissan Res Ctr, Adv Mat Lab, Yokosuka, Kanagawa 2378523, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 02期

关键词：

SOLAR-CELLS; PHOTOVOLTAIC APPLICATIONS; OPTICAL-ABSORPTION; SI NANOWIRES; SURFACE; GROWTH;

D O I：

10.1143/JJAP.51.02BP09

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

30-nm-diameter silica nanoparticles with a carboxyl radical (COO-) were successfully dispersed on an amino-treated silicon wafer at about 20 nm intervals owing to the repulsion among nanoparticles with negative charges. The dispersed silica nanoparticles were used as the mask for the preparation of silicon nanowire (SiNW) arrays by metal-assisted chemical etching (MAE). The diameter of the prepared SiNWs was approximately 30nm from their transmission electron microscope image. (C) 2012 The Japan Society of Applied Physics

引用

页数：4

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