Localized amorphization in SiC induced by ball milling

被引：5

作者：

Yang, XY ^{[1
]}

Wu, YK ^{[1
]}

Ye, HQ ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Met Res, Atom Imaging Solids Lab, Shenyang 110015, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2001年 / 20卷 / 16期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1023/A:1017938832706

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Localized amorphization in SiC induced by ball milling (BM) was discussed and characterized at atomic scale by using high resolution electron microscopy (HREM). The motion of the partials occured first that led to the changes in stacking sequences with the introduction of ball-milling (BM). More dislocations were caused by further milling. Accumulation of these defects was caused by the cascade motion of the partials on neighbouring planes. A tremendous increase in the energy of the system was noticed that led to the localized amorphization.

引用

页码：1517 / 1518

页数：2

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