Illumination Source Optimization in EUV lithography for staggered Contact Holes and Pillars for DRAM Applications

被引:6
|
作者
Finders, Jo [1 ]
Wang, Ziyang [1 ]
Mcnamara, John [1 ]
Rispens, Gijsbert [1 ]
Broman, Par [1 ]
Ahn, Chang-Nam [2 ]
Lee, Inhwan [3 ]
Kim, Hwan [3 ]
Kang, Junghyun [3 ]
Hyun, Yoonsuk [3 ]
Lim, Chang-Moon [3 ]
机构
[1] ASML Netherlands BV, Run 6501, NL-5504 DR Veldhoven, Netherlands
[2] ASML Korea, 25,5 Gil,Samsung 1 Ro, Hwasung Si 445170, Gyeonggi Do, South Korea
[3] SK Hynix, 2091 Gyeongchung Daero, Icheon Si, Gyeonggi Do, South Korea
来源
关键词
illumination source optimization; Mask 3D induced contrast loss;
D O I
10.1117/12.2299598
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Illumination source optimization is a very fundamental task in wafer lithography. By optimizing the incidence angles at the reticle, the combined diffraction behavior of mask and projection optics can be modified. One of the most critical parameter to control in EUV lithography is contrast at best and through focus as this drives the stochastic effects. In this work, we will look at the illumination source optimization for staggered CH and pillars for DRAM applications driven by fundamental considerations at diffraction level.
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页数:6
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