Simulation of channeling and radiation of 855 MeV electrons and positrons in a small-amplitude short -period bent crystal

被引：21

作者：

Korol, Andrei V. ^{[1
]}

Bezchastnov, Victor G. ^{[2
,3
]}

Sushko, Gennady B. ^{[1
]}

Solov'yov, Andrey V. ^{[1
]}

机构：

[1] MBN Res Ctr, Altenhoferallee 3, D-60438 Frankfurt, Germany

[2] AF Ioffe Phys Tech Inst, Politechnicheskaya Str 26, St Petersburg 194021, Russia

[3] Peter Great St Petersburg Polytech Univ, Politechnicheskaya 29, St Petersburg 195251, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2016年 / 387卷

关键词：

Channeling; Periodically bent crystal; De-channeling length; Radiation spectra; CHARGED-PARTICLES; EMISSION; SILICON;

D O I：

10.1016/j.nimb.2016.09.021

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Channeling and radiation are studied for the relativistic electrons and positrons passing through a Si crystal periodically bent with a small amplitude and a short period. Comprehensive analysis of the channeling process for various bending amplitudes is presented on the grounds of numerical simulations. The features of the channeling are highlighted and elucidated within an analytically developed continuous potential approximation. The radiation spectra are computed and discussed. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：41 / 53

页数：13

共 28 条

[1] Channeling and radiation of 855 MeV electrons and positrons in straight and bent tungsten (110) crystals
Shen, H.
Zhao, Q.
Zhang, F. S.
Sushko, Gennady B.
Korol, Andrei V.
Solov'yov, Andrey V.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 424 : 26 - 36
[2] Channeling and radiation of the 855 MeV electrons enhanced by the re-channeling in a periodically bent diamond crystal
Andrei V. Korol
Victor G. Bezchastnov
Andrey V. Solov’yov
[J]. The European Physical Journal D, 2017, 71
[3] Channeling and radiation of the 855 MeV electrons enhanced by the re-channeling in a periodically bent diamond crystal
Korol, Andrei V.
Bezchastnov, Victor G.
Solov'yov, Andrey V.
[J]. EUROPEAN PHYSICAL JOURNAL D, 2017, 71 (06):
[4] Bent crystal channeling of 255 MeV electrons
Takabayashi, Y.
Pivovarov, Yu. L.
Tukhfatullin, T. A.
[J]. PHYSICS LETTERS A, 2018, 382 (04) : 153 - 156
[5] RADIATION OF 375 MeV ELECTRONS AND POSITRONS DURING CHANNELING IN STRAIGHT AND PERIODICALLY BENT DIAMOND CRYSTALS
Pavlov, A. V.
Ivanov, V. K.
Korol, A. V.
Solov'yov, A. V.
[J]. ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2019, 12 (04): : 108 - 118
[6] A SIMULATION CODE FOR CHANNELING RADIATION BY ULTRARELATIVISTIC ELECTRONS OR POSITRONS
ARTRU, X
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 48 (1-4): : 278 - 282
[7] Formation of spectral characteristics of channeling radiation from 800 to 2000 MeV electrons and positrons in a thin silicon crystal
Bogdanov, O. V.
Pivovarov, Yu. L.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (17): : 3852 - 3857
[8] Atomistic modeling and characterizaion of light sources based on small-amplitude short-period periodically bent crystals
Korol, Andrei, V
Solov'yov, Andrey, V
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2023, 537 : 1 - 13
[9] MEASUREMENT OF THE OCCUPATION LENGTHS OF CHANNELED 17-MEV ELECTRONS AND 54-MEV ELECTRONS AND POSITRONS IN SILICON BY MEANS OF CHANNELING RADIATION
KEPHART, JO
PANTELL, RH
BERMAN, BL
DATZ, S
PARK, H
KLEIN, RK
[J]. PHYSICAL REVIEW B, 1989, 40 (07): : 4249 - 4263
[10] Radiation from multi-GeV electrons and positrons in periodically bent silicon crystal
Bezchastnov, Victor G.
Korol, Andrei V.
Solov'yov, Andrey V.
[J]. JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 2014, 47 (19)

← 1 2 3 →