Initial stages of MnAs heteroepitaxy and nanoisland growth on GaAs(110) and (001) surfaces

被引：4
|
作者：
Hirayama, Motoi [1 ]
Bell, Gavin R. [1 ,2 ]
Tsukamoto, Shiro [1 ]
机构：
[1] Anan Natl Coll Technol, Tokushima 7740017, Japan
[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 04期
基金：
日本科学技术振兴机构;
关键词：
arsenic alloys; epitaxial growth; manganese alloys; nanofabrication; nanostructured materials; symmetry; MOLECULAR-BEAM EPITAXY; MAGNETIC-PROPERTIES; IN-SITU; ZINCBLENDE MNAS; GROUND-STATE; GA ADATOMS; GAAS(001); RECONSTRUCTIONS; MIGRATION; FILMS;
D O I：
10.1116/1.3610963
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors have investigated the initial growth of MnAs layers by step-by-step epitaxy on GaAs(110) and GaAs(001). On both surfaces, MnAs nanocrystals developed as the initial stage of MnAs layer formation. Surprisingly, an ultrahigh density (similar to 1x10(12) cm(-2)) of the nanocrystals with a height of similar to 5 nm and a size of similar to 20 nm appeared on GaAs(110). On different surface orientations, the density and the size of the nanocrystals vary. The behavior of the nanocrystallizations can be explained by symmetry at the surface. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3610963]
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页数：5
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