Initial stages of MnAs heteroepitaxy and nanoisland growth on GaAs(110) and (001) surfaces

被引：4
|
作者：
Hirayama, Motoi [1 ]
Bell, Gavin R. [1 ,2 ]
Tsukamoto, Shiro [1 ]
机构：
[1] Anan Natl Coll Technol, Tokushima 7740017, Japan
[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 04期
基金：
日本科学技术振兴机构;
关键词：
arsenic alloys; epitaxial growth; manganese alloys; nanofabrication; nanostructured materials; symmetry; MOLECULAR-BEAM EPITAXY; MAGNETIC-PROPERTIES; IN-SITU; ZINCBLENDE MNAS; GROUND-STATE; GA ADATOMS; GAAS(001); RECONSTRUCTIONS; MIGRATION; FILMS;
D O I：
10.1116/1.3610963
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors have investigated the initial growth of MnAs layers by step-by-step epitaxy on GaAs(110) and GaAs(001). On both surfaces, MnAs nanocrystals developed as the initial stage of MnAs layer formation. Surprisingly, an ultrahigh density (similar to 1x10(12) cm(-2)) of the nanocrystals with a height of similar to 5 nm and a size of similar to 20 nm appeared on GaAs(110). On different surface orientations, the density and the size of the nanocrystals vary. The behavior of the nanocrystallizations can be explained by symmetry at the surface. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3610963]
引用
收藏
页数：5
相关论文
共 50 条
  • [21] ON THE GROWTH OF SILVER ON GAAS(001) SURFACES
    MASSIES, J
    LINH, NT
    JOURNAL OF CRYSTAL GROWTH, 1982, 56 (01) : 25 - 38
  • [22] Strain Induced Anisotropy Change in Ultrathin Fe Films Grown on MnAs(110)/GaAs(001)
    Helman, Christian
    Maria Llois, Ana
    IEEE TRANSACTIONS ON MAGNETICS, 2013, 49 (08) : 4675 - 4678
  • [23] Reflectance-difference studies of interface-formation and initial-growth processes in ZnSe/GaAs(001) heteroepitaxy
    Yasuda, T
    Kimura, K
    Miwa, S
    Kuo, LH
    Ohtake, A
    Jin, CG
    Tanaka, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04): : 1212 - 1220
  • [24] Initial stages of cubic GaN growth on the GaAs(001) surface studied by scanning tunneling microscopy
    Xue, Qi-Kun
    Xue, Qi-Zhen
    Hasegawa, Yukio
    Tsong, Ignatius S.T.
    Sakurai, Toshio
    Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (11 B):
  • [25] Spatial distribution of In during the initial stages of growth of InAs on GaAs(001)-c(4 × 4)
    Imperial Coll, London, United Kingdom
    Surf Sci, 3 (735-742):
  • [26] Initial stages of cubic GaN growth on the GaAs(001) surface studied by scanning tunneling microscopy
    Xue, QK
    Xue, QZ
    Hasegawa, Y
    Tsong, IST
    Sakurai, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11B): : L1486 - L1489
  • [27] KINETIC LIMITS TO GROWTH ON (001) AND (110) GAAS BY OMCVD
    ASPNES, DE
    COLAS, E
    STUDNA, AA
    BHAT, R
    KOZA, MA
    KERAMIDAS, VG
    VACUUM, 1990, 41 (4-6) : 978 - 981
  • [28] Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy
    Sasaki, Takuo
    Suzuki, Hidetoshi
    Sai, Akihisa
    Takahasi, Masamitu
    Fujikawa, Seiji
    Kamiya, Itaru
    Ohshita, Yoshio
    Yamaguchi, Masafumi
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 13 - 16
  • [29] K/GAAS(110) INTERFACE - INITIAL-STAGES OF GROWTH AND THE SEMICONDUCTOR-TO-METAL TRANSITION
    VENTRICE, CA
    DINARDO, NJ
    PHYSICAL REVIEW B, 1993, 47 (11): : 6470 - 6479
  • [30] Initial stages of GaAs MBE growth on Si(111)(√3 × √3)-Ga surfaces
    Maehashi, Kenzo, 1600, (29):
12345