On thermoelectric figure-of-merit of Pb0.78Sn0.22Te⟨Ge⟩ solid solution

被引：1
|
作者：
Vahanyan, A. I. [1 ]
Aroutiounian, V. M. [1 ]
Baghiyan, E. M. [1 ]
Abrahamyan, V. K. [1 ]
Yepremyan, A. H. [2 ]
机构：
[1] Yerevan State Univ, Dept Phys Semicond & Microelect, Yerevan 0025, Armenia
[2] Sonics Armenia Holdings Inc, Armenian Branch, Yerevan 0026, Armenia
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2008年 / 463卷 / 1-2期
关键词：
thermoelectric properties; lead-tin-tellurium; thermal emf coefficient; electrical conductivity coefficient; thermal conductivity coefficient; thermoelectric figure-of-merit;
D O I：
10.1016/j.jallcom.2007.09.053
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The investigation results of temperature dependences of thermoelectric parameters in the 140-440 K temperature range are reported for Pb0.78Sn0.22Te < Ge(0.5 at.%)> solid solution, having p-type conductivity. The aim is to determine its perspectives as a promising material for thermoelements. Investigations have shown that the temperature dependences of thermoelectric parameters have some interesting features caused by phase transition observed at temperature 290 K. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：480 / 483
页数：4
相关论文
共 50 条
  • [1] On thermoelectric figure-of-merit of Pb0.78Sn0.22TeGe solid solution
    Vahanyan, A.I.
    Aroutiounian, V.M.
    Baghiyan, E.M.
    Abrahamyan, V.K.
    Yepremyan, A.H.
    Journal of Alloys and Compounds, 2008, 463 (1-2): : 480 - 483
  • [2] Thermoelectric properties of Pb0.22Sn0.78Te<Ge> solid solution
    A. I. Vahanyan
    V. M. Aroutiounian
    E. M. Baghiyan
    A. H. Yepremyan
    V. K. Abrahamyan
    Journal of Contemporary Physics (Armenian Academy of Sciences), 2007, 42 (2) : 65 - 69
  • [3] PHOTOELECTRIC EFFECT IN PB0.78SN0.22TE - IN CRYSTALS
    VUL, BM
    GRISHECHKINA, SP
    RAGIMOVA, TS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (08): : 928 - 931
  • [4] Thermoelectric power and activation energy for hopping conductivity in Pb0.78Sn0.22Te solid solutions with high In content
    Nemov, SA
    Proshin, VI
    Ravich, YI
    SEMICONDUCTORS, 1996, 30 (12) : 1128 - 1129
  • [5] INDIUM-DOPED SOLID-SOLUTION PB0.78SN0.22TE WITH A LOW CURRENT CARRIER CONCENTRATION
    ALEKSANDROV, OV
    KALYUZHNAYA, GA
    KISELEVA, KV
    STROGANKOVA, NI
    INORGANIC MATERIALS, 1978, 14 (07) : 998 - 1000
  • [6] TRANSPORT PHENOMENA IN PB0.78SN0.22TE WITH HIGH IN IMPURITY CONCENTRATIONS
    NEMOV, SA
    RAVICH, YI
    BEREZIN, AV
    GASUMYANTS, VE
    ZHITINSKAYA, MK
    PROSHIN, VI
    SEMICONDUCTORS, 1993, 27 (02) : 165 - 168
  • [7] Optical reflection in Pb0.78Sn0.22Te doped to 3 at. % with indium
    Veis, AN
    Nemov, SA
    SEMICONDUCTORS, 1998, 32 (09) : 937 - 938
  • [8] CHARACTERISTICS OF TRANSFER PHENOMENA IN PB0.78SN0.22TE WITH A LARGE INDIUM CONTENT
    VUL, BM
    VORONOVA, ID
    KALYUZHNAYA, GA
    MAMEDOV, TS
    RAGIMOVA, TS
    JETP LETTERS, 1979, 29 (01) : 18 - 22
  • [9] Optical reflection in Pb0.78Sn0.22Te doped to 3 at. % with indium
    A. N. Veis
    S. A. Nemov
    Semiconductors, 1998, 32 : 937 - 938
  • [10] Variable-range-hopping conduction via indium impurity states in Pb0.78Sn0.22Te solid solution
    S. A. Nemov
    V. É. Gasumyants
    V. I. Proshin
    Yu. V. Ravich
    D. A. Potapova
    Semiconductors, 2000, 34 : 889 - 890
12345