Present status and future prospects of polycrystalline thin-film solar cells in Japan

被引：0
|
作者：
Konagai, M [1 ]
机构：
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
来源：
POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS | 2001年 / 80-81卷
关键词：
CdTe; Cu(InGa)Se-2; polycrystalline Si; solar cells; thin-film solar cells;
D O I：
10.4028/www.scientific.net/SSP.80-81.257
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polycrystalline semiconductors have attracted much attention to fundamentally reduce the manufacturing cost of solar cell modules. In this paper, Japanese achievements in the area of polycrystalline thin film solar cells are reviewed. The polycrystalline Si thin film solar cell with a thickness of 2.0 mum deposited by plasma chemical vapor deposition(CVD) has already demonstrated an intrinsic efficiency of 10.7%. Up to now, an efficiency of 9.7% has been achieved for a-Si/poly-Si modules with an area of 1,200cm(2). Parallel with the development of polycrystalline Si thin film solar cell technology, other concepts are pursued to improve further the efficiency of thin film solar cells. A variety of polycrystalline thin film materials, such as Cu(InGa)Se-2(CIGS) and CdTe have been investigated, The most remarkable improvement in CIGS thin film solar cell efficiency has been the 18.5%(0.96cm(2)) and 12.5%(860cm(2)) efficient device. A CdTe solar cell with an efficiency of 16%(1 cm(2)) and 10.6% (5413cm(2)) has been successfully fabricated.
引用
收藏
页码：257 / 267
页数：11
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