Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency

被引：26

作者：

Chen, Aqing ^{[1
,2
]}

Zhu, Kaigui ^{[1
]}

机构：

[1] Beihang Univ, Dept Phys, Beijing 100191, Peoples R China

[2] Leshan Vocat & Tech Coll, Sch New Energy Engn, Leshan 614000, Peoples R China

来源：

SOLAR ENERGY | 2012年 / 86卷 / 01期

关键词：

a-Si/c-Si heterojunction; TCO work function; Solar cells; Photovoltaics; AMORPHOUS-SILICON; WORK FUNCTION; LAYER; TCO;

D O I：

10.1016/j.solener.2011.10.015

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The p-type a-Si:H/n-type c-Si (P+ a-Si:H/N+ c-Si) heterojunction was simulated for developing solar cells with high conversion efficiency and low cost. The characteristic of such cells with different work function of transparent conductive oxide (TCO) were calculated. The energy band structure, quantum efficiency and electric field are analyzed in detail to understand the mechanism of the heterojunction cell. Our results show that the a-Si/c-Si heterojunction is hypersensitive to the TCO work function, and the TCO work function should be large enough in order to achieve high conversion efficiency of P+ a-Si:H/N+ c-Si solar cells. With the optimized parameters set, the P+ a-Si:H/N+ c-Si solar cell reaches a high efficiency (eta) up to 21.849% (FF: 0.866, V-OC: 0.861 V, J(SC): 29.32 mA/cm(2)). (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：393 / 397

页数：5

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