A percolation study of RTS noise in deep sub-micron MOSFET by Monte Carlo simulation

被引：0
|
作者：
Ma, ZF [1 ]
Zhuang, YQ
Du, L
Wei, S
机构：
[1] Xidian Univ, Inst Microelect, Xian 710071, Peoples R China
[2] Xidian Univ, Key Lab Minist Educ Wide Band Gap Semicond Mat &, Xian 710071, Peoples R China
来源：
CHINESE PHYSICS | 2005年 / 14卷 / 04期
关键词：
MOSFET; RTS noise; T-c/T-e; percolation; model;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Based on percolation theory and random telegraph signal (RTS) noise generation mechanism, a numerical model for RTS in deep submicron metal-oxide-semiconductor field-effect transistor (MOSFET) was presented, with which the dependence of tau(c)/tau(e), (where tau(c)=capture time, T-e=emission period) on energy levels and trap depth with respect to the interface of traps can be simulated. Compared with experimental results, the simulated ones showed a good qualitative agreement.
引用
收藏
页码：808 / 811
页数：4
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