Ion energy spread in laser-assisted atom probe tomography

被引：4
|
作者：
Sevelin-Radiguet, N. [1 ]
Arnoldi, L. [1 ]
Vurpillot, F. [1 ]
Normand, A. [1 ]
Deconihout, B. [1 ]
Vella, A. [1 ]
机构：
[1] Univ Rouen, Normandie Univ, INSA Rouen, UMR 6634 CNRS,Grp Phys Mat, F-76801 St Etienne du Rouvray, France
来源：
EPL | 2015年 / 109卷 / 03期
关键词：
TIME-OF-FLIGHT; FIELD-EVAPORATION; SEMICONDUCTOR SURFACES; DESORPTION; DESIGN; METAL;
D O I：
10.1209/0295-5075/109/37009
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A dedicated setup has been developed to measure with precision the appearance energy of field evaporated ions in laser-assisted atom probe. Energy spreads down to 0.5 eV can be measured on different materials under different experimental conditions (electric field and laser illumination). Looking at each possible contributions, we show that this energy spread depends on the material and that it is due to the field evaporation process itself and especially to temperature-induced surface diffusion and electric-field strength in the case of metals and low-band-gap materials. For large-band-gap materials, a dependence on the laser illumination is shown.Copyright (C) EPLA, 2015
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页数：5
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