Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

被引:4
|
作者
Tan, Michael Loong Peng [1 ,2 ]
Amaratunga, Gehan A. J. [1 ]
机构
[1] Univ Cambridge, Ctr Adv Elect & Photon, Elect Engn Div, Dept Engn, 9 JJ Thomson Ave, Cambridge CB 0FA, England
[2] Univ Teknol Malaysia, Fac Elect Engn, Computat Nanoelect Res Grp, Skudai 81310, Malaysia
来源
关键词
Device modeling; graphene; carbon nanotube; subthreshold swing; conductance; ELECTRONICS;
D O I
10.1063/1.3587020
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) field-effect transistor (FET) can be the basis for a quasi-one- dimensional (Q1D) transistor technology. Recent experiments show that the on-off ratio for GNR devices can be improved to level exploration of transistor action is justified. Here we use the tight binding energy dipersion approximation, to assess the performance of semiconducting CNT and GNR is qualitatively in terms of drain current drive strength, bandgap and density of states for a specified device. By reducing the maximum conductance 4e2/h by half, we observed that our model has a particularly good fit with 50 nm channel single walled carbon nanotube (SWCNT) experimental data. Given the same bandgap, CNTs outperform GNRs due to valley degeneracy. Nevertheless, the variation of the device contacts will decide which transistor will exhibit better conductivity and thus higher ON currents.
引用
收藏
页码:365 / +
页数:3
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