Statistical Analysis of Flash Memory Read Data

被引：0

作者：

Moon, Jaekyun ^{[1
]}

No, Jaehyeong ^{[1
]}

Lee, Sangchul ^{[2
]}

Kim, Sangsik ^{[2
]}

Yang, Joongseop ^{[2
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

[2] Hynix Semicond, Dept Flash Solut Dev, Icheon, South Korea

来源：

2011 IEEE GLOBAL TELECOMMUNICATIONS CONFERENCE (GLOBECOM 2011) | 2011年

基金：

新加坡国家研究基金会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses a technique for analyzing real data from flash memory cells. The goal is to identify and isolate various sources that cause the shifts and variations of the read values with respect to the intended write values. The analysis reveals how the neighboring cells interfere with the victim cell. Using the proposed analysis technique, the contribution of a specified set of neighboring cells towards the random read variation of the victim cell can also be quantified.

引用

页数：6

共 50 条

[1] Statistical simulations for flash memory reliability analysis and prediction
Larcher, L
Pavan, P
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (10) : 1636 - 1643
[2] ApproxRefresh: Enabling Uncorrectable Data Reuse on Flash Memory with Approximate Read Awareness
Cui, Jinhua
Liu, Junwei
Huang, Jianhang
Zhu, Haoran
Yang, Laurence Tianruo
[J]. 21ST ACM SIGPLAN/SIGBED CONFERENCE ON LANGUAGES, COMPILERS, AND TOOLS FOR EMBEDDED SYSTEMS (LCTES '20), 2020, : 26 - 37
[3] Cocktail: Mixing Data With Different Characteristics to Reduce Read Reclaims for nand Flash Memory
Zhang, Genxiong
Deng, Yuhui
Zhou, Yi
Pang, Shujie
Yue, Jianhui
Zhu, Yifeng
[J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2023, 42 (07) : 2336 - 2349
[4] Data Quality Management for Flash Memory based Read Intensive Embedded and Multimedia Applications
Rizvi, Sanam Shahla
Chung, Tae-Sun
[J]. PROCEEDINGS OF THE 2009 FOURTH INTERNATIONAL CONFERENCE ON EMBEDDED AND MULTIMEDIA COMPUTING, 2009, : 192 - 195
[5] Drain read disturb assessment of NOR flash memory
Lee, Yung-Huei
Mielke, Neal
McMahon, William
Lu, Yin-Lung R.
Meng, Qingru
Jiang, Linda
[J]. 2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM, 2008, : 83 - 84
[6] Flash memory failure analysis: Advanced flash memory analysis
Freescale Semiconductor, Inc., Austin, TX, United States
[J]. Electron. Device Fail. Anal., 2009, 2 (30-34):
[7] Flash memory allows simultaneous read, write, and erase
Levy, M
[J]. EDN, 1996, 41 (18) : 22 - 22
[8] Flash memory allows simultaneous read, write, and erase
Levy, M
[J]. EDN, 1996, 41 (19) : 34 - 34
[9] Read Disturb Errors in MLC NAND Flash Memory
Cai, Yu
Luo, Yixin
Ghose, Saugata
Haratsch, Erich F.
Mai, Ken
Mutlu, Onur
[J]. IPSI BGD TRANSACTIONS ON INTERNET RESEARCH, 2018, 14 (02):
[10] NUMERICAL-ANALYSIS DATA AND READ-ONLY MEMORY
ROONEY, MF
SHEPHARD, MS
[J]. COMPUTERS & STRUCTURES, 1984, 18 (02) : 295 - 300

← 1 2 3 4 5 →