Stable monolayer α-phase of CdTe: strain-dependent properties

被引:10
|
作者
Unsal, E. [1 ]
Senger, R. T. [1 ,2 ]
Sahin, H. [2 ,3 ]
机构
[1] Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey
[2] Izmir Inst Technol, ICTP ECAR Eurasian Ctr Adv Res, TR-35430 Izmir, Turkey
[3] Izmir Inst Technol, Dept Photon, TR-35430 Izmir, Turkey
关键词
II-VI-COMPOUNDS; SINGLE-LAYER; ELECTRONIC-STRUCTURE; CDSE; MOS2; NANOCRYSTALS; PSEUDOPOTENTIALS; DIAMOND; ENERGY; FILMS;
D O I
10.1039/c7tc04151a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
CdTe is a well known and widely used binary compound for optoelectronic applications. In this study, we propose the thinnest, free standing monolayer of CdTe which has a tetragonal-PbO (alpha-PbO) symmetry. The structural, electronic, vibrational and strain dependent properties are investigated by means of first principles calculations based on density functional theory. Our results demonstrate that monolayer alpha-CdTe is a dynamically stable and mechanically flexible material. It is found that the thinnest monolayer crystal of CdTe is a semiconductor with a direct band gap of 1.95 eV, which corresponds to red light in the visible spectrum. Moreover, it is found that the band gap can be tunable under biaxial strain. With its strain-controllable direct band gap within the visible spectrum, the stable a-phase of monolayer CdTe is a suitable candidate for optoelectronic device applications.
引用
收藏
页码:12249 / 12255
页数:7
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