Crystallographic aspects of pore formation in gallium arsenide and silicon

被引：37
|
作者：
Ross, FM
Oskam, G
Searson, PC
Macaulay, JM
Liddle, JA
机构：
[1] JOHNS HOPKINS UNIV, DEPT MAT SCI & ENGN, BALTIMORE, MD 21218 USA
[2] SILICON VIDEO CORP, SAN JOSE, CA 95119 USA
[3] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
来源：
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1997年 / 75卷 / 02期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1080/01418619708205156
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structure of porous layers formed in n-type GaAs is characterized and compared with the more familiar structure of porous n-type Si. Pores in n-type GaAs run in [111]a directions and have triangular or hexagonal cross-sections; their size and degree of branching depend on the doping level and current density. The characteristic differences between porous GaAs and porous Si are explained by a model in which we consider the bonding configuration of atoms on steps, kinks and terraces on the interior of the pore and the spatial distribution of the rate-limiting electrochemical reactions.
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页码：525 / 539
页数：15
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