Laser Radiation Induces Growth and Lipid Accumulation in the Seawater Microalga Chlorella pacifica

被引:9
|
作者
Zhang, Haonan [1 ]
Gao, Zhengquan [1 ]
Li, Zhe [1 ]
Du, Huanmin [1 ]
Lin, Bin [1 ]
Cui, Meng [1 ]
Yin, Yonghao [1 ]
Lei, Fengming [1 ]
Yu, Chunyu [1 ]
Meng, Chunxiao [1 ]
机构
[1] Shandong Univ Technol, Sch Life Sci, Zibo 255049, Peoples R China
基金
中国国家自然科学基金;
关键词
cell growth; Chlorella pacifica; chlorophylls; laser irradiation; lipid productivity; nitrate reductase; NITRATE REDUCTASE; VULGARIS; RED; IRRADIATION; EXPRESSION; QUALITY; DIATOMS; IMPACT;
D O I
10.3390/en10101671
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The impacts of laser radiation (Nd: YAG laser, 1064 nm at 800 mW, He-Ne laser 808 nm at 6 W, semiconductor laser 632.8 nm at 40 mW) on growth and lipid accumulation of Chlorella pacifica were investigated in this study. The results showed growth rates increased 1.23, 1.41, and 1.40-fold over controls by 4 min Nd: YAG, 4 min He-Ne, and 8 min semiconductor laser treatments, respectively, whereas the corresponding nitrate reductase observed increased 1.25, 1.63, and 2.08-fold over controls. Moreover, total chlorophyll concentration was increased to 1.09, 1.29, and 1.33-fold over controls, respectively. After 20 days cultivation, the highest lipid content was 35.99%, 18.46%, and 31.00% after 2 min Nd: YAG, 4 min He-Ne, and 4 min semiconductor laser treatments, corresponding to 2.86, 1.50, and 2.46-fold increase over controls, respectively. Furthermore, the lipid productivity of the above 3 treatments were 15.25 +/- 2.56, 16.25 +/- 2.45, and 14.75 +/- 2.11 mg L-1 d(-1). However, the highest lipid productivity was 22.00 +/- 3.28, 16.25 +/- 2.45, and 19.25 +/- 1.78 mg L-1 d(-1), in response to treatment for 2 min Nd: YAG, 1 min He-Ne, and 4 min semiconductor laser treatments, with 2.67, 1.97, and 2.33-fold increase over controls, respectively. These results indicated that lipid accumulation efficiency of C. pacifica could be significantly improved by laser irradiation using Nd: YAG, He-Ne, and semiconductor laser treatments.
引用
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页数:14
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