Behavior of N-Doped TiO2 and N-Doped ZnO in Photocatalytic Azo Dye Degradation under UV and Visible Light Irradiation: A Preliminary Investigation

N-doped TiO2 (N-TiO2) and N-doped ZnO (N-ZnO) were synthesized utilizing ammonia as a dopant source. The chemico-physical characteristics of synthesized samples were studied by Raman spectroscopy, X-ray diffraction, SEM analysis, N-2 adsorption-desorption at -196 degrees C, and diffuse reflectance spectroscopy. Compared to undoped samples, the introduction of nitrogen in the semiconductor lattice resulted in a shift of band-gap energy to a lower value: 3.0 eV for N-ZnO and 2.35 eV for N-TiO2. The photocatalysts were tested for the degradation of Eriochrome Black T (EBT), which was selected as a model azo dye. Both N-doped semiconductors evidenced an improvement in photocatalytic activity under visible light irradiation (62% and 20% EBT discoloration for N-TiO2 and N-ZnO, respectively) in comparison with the undoped samples, which were inactive in the presence of visible light. Different behavior was observed under UV irradiation. Whereas N-TiO2 was more photoactive than commercial undoped TiO2, the introduction of nitrogen in ZnO wurtzite resulted in a drastic reduction in photocatalytic activity, with only 45% EBT discoloration compared to total color removal obtained with the commercial ZnO sample, suggesting intrinsic limitations for doping of this class of semiconductors.