Critical properties of nanoscale asymmetric ferroelectric tunnel junctions or capacitors

被引:16
|
作者
Zheng, Yue [1 ,2 ]
Chen, W. J. [1 ]
Luo, X. [1 ,3 ]
Wang, B. [1 ]
Woo, C. H. [2 ]
机构
[1] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[2] Hong Kong Polytech Univ, Dept Elect & Informat Engn, Hong Kong, Hong Kong, Peoples R China
[3] Inst High Performance Comp, Singapore, Singapore
关键词
Asymmetric; Ferroelectric; Tunnel junctions; Polarization; Critical thickness; CRITICAL THICKNESS; PHASE-TRANSITIONS; ELECTRORESISTANCE; DEPOLARIZATION; INTERFACE; PHYSICS; FILMS;
D O I
10.1016/j.actamat.2011.12.048
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Critical properties, such as the phase transition temperature, critical thickness and Curie Weiss-type relation, of nanoscale asymmetric ferroelectric tunnel junctions or capacitors are investigated, considering the effects of size, surfaces, asymmetric interfaces and electrodes on the stability and magnitude of the two spontaneous polarization states. Using the modified thermodynamic model and taking into account contributions of the depolarization field, built-in electric field, interface and surface energies to the thermodynamic potential, explicit expressions of the critical properties are derived. For the asymmetric ferroelectric tunnel junction or capacitor, the results illustrate two important behaviors of vanishing critical thickness for the spontaneous polarization and smearing of the phase transitions, respectively. In addition, other critical properties are discussed as functions of the ambient temperature, misfit strain, surface coefficients, work function steps, dielectric constants and screening lengths of electrodes. Owing to the high-sensitivity of the critical properties to structures of asymmetric interfaces and electrodes, the results also suggest that the critical and other functional properties of nanoscale asymmetric ferroelectric tunnel junctions or capacitors can be completely controlled by adjusting the difference between asymmetric interfaces or electrodes. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:1857 / 1870
页数:14
相关论文
共 50 条
  • [1] Impedance Spectroscopy of Ferroelectric Capacitors and Ferroelectric Tunnel Junctions
    Benatti, Lorenzo
    Vecchi, Sara
    Puglisi, Francesco Maria
    [J]. 2022 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP, IIRW, 2022,
  • [2] Elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions
    Pertsev, N. A.
    Kohlstedt, H.
    [J]. PHYSICAL REVIEW LETTERS, 2007, 98 (25)
  • [3] Ferroelectricity in ultrathin asymmetric ferroelectric tunnel junctions: vanishing critical thickness
    Zheng, Yue
    Chen, W. J.
    Woo, C. H.
    Wang, Biao
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (09)
  • [4] Comment on "Elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions"
    Bratkovsky, A. M.
    Levanyuk, A. P.
    [J]. PHYSICAL REVIEW LETTERS, 2008, 100 (14)
  • [5] Vanishing critical thickness in asymmetric ferroelectric tunnel junctions: First principle simulations
    Cai, Meng-Qiu
    Zheng, Yue
    Ma, Pui-Wai
    Woo, C. H.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (02)
  • [6] First-principles study of the critical thickness in asymmetric ferroelectric tunnel junctions
    Cai, Meng-Qiu
    Du, Yong
    Huang, Bo-Yun
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (10)
  • [7] Comment on "Elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions" - Reply
    Pertsev, N. A.
    Kohlstedt, H.
    [J]. PHYSICAL REVIEW LETTERS, 2008, 100 (14)
  • [8] Tunneling Electroresistance Effect in Ferroelectric Tunnel Junctions at the Nanoscale
    Gruverman, A.
    Wu, D.
    Lu, H.
    Wang, Y.
    Jang, H. W.
    Folkman, C. M.
    Zhuravlev, M. Ye.
    Felker, D.
    Rzchowski, M.
    Eom, C. -B.
    Tsymbal, E. Y.
    [J]. NANO LETTERS, 2009, 9 (10) : 3539 - 3543
  • [9] Tailoring nanoscale polarization patterns and transport properties in ferroelectric tunnel junctions by octahedral tilts in electrodes
    Li, Hongfang
    Chen, Weijin
    Zheng, Yue
    [J]. RSC ADVANCES, 2020, 10 (58) : 35367 - 35373
  • [10] Ferroelectricity and tunneling electroresistance effect in asymmetric ferroelectric tunnel junctions
    Tao, L. L.
    Wang, J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2016, 119 (22)