Nonlinearity and Power Handling Characterization of An Optically Reconfigurable Microwave Switch

被引：0
|
作者：
Pang, A. W. [1 ]
Bensmida, S. [1 ]
Cryan, M. J. [1 ]
机构：
[1] Univ Bristol, Dept Elect & Elect Engn, Bristol BS8 1TR, Avon, England
来源：
2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS | 2018年
关键词：
Nonlinearity characterization; Microwave device; Photoconducting switches;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a highly linear optically reconfigurable microwave switch with high power handling ability. A silicon superstrate with bottom illumination is employed. A transparent substrate is used and two different microstrip gap distances are characterized by two-tone nonlinearity measurement with different tone spacings and optical powers. A maximum third order intercept point referred to input power of +78.5dBm has been obtained and the maximum microwave power tested was over 30W per tone close to 2 GHz. Thermal imaging has been used to observe the device hot-spots as a function of RF power.
引用
收藏
页码：420 / 422
页数：3
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