Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga,Mn)As

被引：11
|
作者：
Akiba, N
Matsukura, F
Ohno, Y
Shen, A
Ohtani, K
Sakon, T
Motokawa, M
Ohno, H
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
来源：
PHYSICA B-CONDENSED MATTER | 1998年 / 256卷
基金：
日本学术振兴会;
关键词：
magnetic semiconductor; (Ga; Mn)As; spin splitting; tunneling;
D O I：
10.1016/S0921-4526(98)00490-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Tunneling and magnetotunneling properties of GaAs-based p-type double barrier resonant tunneling diodes (RTD's) with a ferromagnetic (Ga,Mn)As emitter layer are studied. Current-voltage characteristics of RTD's revealed the presence of spontaneous magnetization in the (Ga,Mn)As emitter. The transverse magnetic field results suggest that the valence band dispersion of (Ga,Mn)As is different from GaAs. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：561 / 564
页数：4
相关论文
共 50 条
  • [1] Magnetotunneling spectroscopy of polarons in a quantum well of a resonant-tunneling diode
    V. G. Popov
    V. G. Krishtop
    O. N. Makarovskii
    M. Henini
    [J]. Journal of Experimental and Theoretical Physics, 2010, 111 : 220 - 224
  • [2] Magnetotunneling spectroscopy of polarons in a quantum well of a resonant-tunneling diode
    Popov, V. G.
    Krishtop, V. G.
    Makarovskii, O. N.
    Henini, M.
    [J]. JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2010, 111 (02) : 220 - 224
  • [3] Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy
    Ohno, H
    Akiba, N
    Matsukura, F
    Shen, A
    Ohtani, K
    Ohno, Y
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (03) : 363 - 365
  • [4] Ferromagnetic resonant tunneling diode
    Hovinen, A
    Kuivalainen, R
    [J]. PHYSICA SCRIPTA, 2002, T101 : 166 - 171
  • [5] Ferromagnetic resonant interband tunneling diode
    Vurgaftman, I
    Meyer, JR
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (14) : 2296 - 2298
  • [6] Diode Heterostructures with a Ferromagnetic (Ga,Mn)As Layer
    B. N. Zvonkov
    O. V. Vikhrova
    Yu. A. Danilov
    M. V. Dorokhin
    I. L. Kalentyeva
    A. V. Kudrin
    A. V. Zdoroveyshchev
    E. A. Larionova
    V. A. Koval’skii
    O. A. Soltanovich
    [J]. Physics of the Solid State, 2020, 62 : 423 - 430
  • [7] Diode Heterostructures with a Ferromagnetic (Ga,Mn)As Layer
    Zvonkov, B. N.
    Vikhrova, O. V.
    Danilov, Yu. A.
    Dorokhin, M. V.
    Kalentyeva, I. L.
    Kudrin, A. V.
    Zdoroveyshchev, A. V.
    Larionova, E. A.
    Koval'skii, V. A.
    Soltanovich, O. A.
    [J]. PHYSICS OF THE SOLID STATE, 2020, 62 (03) : 423 - 430
  • [8] Resonant magnetotunneling spectroscopy of p-type-well interband tunneling diodes
    Marquardt, RR
    Collins, DA
    Liu, YX
    Ting, DZY
    McGill, TC
    [J]. PHYSICAL REVIEW B, 1996, 53 (20): : 13624 - 13630
  • [9] Tuning of spin polarization in ferromagnetic resonant tunneling diode by varying δ doping
    Qiu, Z. J.
    Zhang, S. -L.
    Liu, R.
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (24)
  • [10] Magnetotunneling in resonant tunneling structures with spin - orbit interaction
    Isic, Goran
    Indjin, Dragan
    Milanovic, Vitomir
    Radovanovic, Jelena
    Ikonic, Zoran
    Harrison, Paul
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)
12345