The impact of high-κ gate dielectrics on carbon nanotube transistors

被引：2

作者：

Orouji, Ali A. ^{[1
]}

Arefinia, Zahra ^{[1
]}

机构：

[1] Semnan Univ, Dept Elect Engn, Semnan, Iran

来源：

PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 | 2007年

关键词：

carbon nanotube; field effect transistor; high-kappa; two-dimensional (2-D) model;

D O I：

10.1109/IWPSD.2007.4472648

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The potential impact of high-kappa gate dielectrics on carbon nanotube field effect transistors (CNTFETs) is studied over a wide range of dielectric permittivities using a two-dimensional model. It is found that the high-kappa CNTFETs afford high ON currents and high voltage gain. Likewise average electron velocity at the top of the barrier increases. Key transistor performance parameters, transconductance and output conductance improve for high-kappa CNTFETs.

引用

页码：831 / 833

页数：3

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