Potential energy surface for H2Si2 isomer explored with complete basis set ab initio method

被引:8
|
作者
Jursic, BS [1 ]
机构
[1] Univ New Orleans, Dept Chem, New Orleans, LA 70148 USA
来源
JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM | 1999年 / 459卷 / 1-3期
关键词
potential energy surfaces; H2Si2; isomer; stability; complete basis set;
D O I
10.1016/S0166-1280(98)00303-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Singlet and tripler potential energy surfaces for Si2H2 isomers were explored with the complete basis set ab initio method. Several minima on both potential energy surfaces were located and their relative stabilities and activation barriers for interconversion were calculated. It was demonstrated that the most stable structures are those that include a bridged hydrogen. The existence of Si-Si multiple bonds were discussed in light of the relative stability of Si2H2 isomers, their activation barriers, and their bond dissociation energies. (C) 1999 Elsevier Science BV. All rights reserved.
引用
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页码:221 / 228
页数:8
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