Endurance Limits of MLC NAND Flash

被引：0

作者：

Parnell, Thomas ^{[1
]}

Duenner, Celestine ^{[1
]}

Mittelholzer, Thomas ^{[1
]}

Papandreou, Nikolaos ^{[1
]}

Pozidis, Haralampos ^{[1
]}

机构：

[1] IBM Res Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland

来源：

2015 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATIONS (ICC) | 2015年

关键词：

TO-CELL INTERFERENCE; ARCHITECTURE;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

An extensive effort is being undertaken by the flash community to develop signal processing and error-correction coding schemes that make use of soft information. Using experimental data from a state-of-the-art MLC flash device we demonstrate that the theoretical endurance improvement that such schemes can bring is limited. To investigate further, we develop a parametric channel model that takes into account the effects of cell-to-cell interference and demonstrate that it is the presence of programming errors in the channel that restricts the potential endurance enhancement that soft information can offer.

引用

页码：376 / 381

页数：6

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