Complex defects in Cl doped ZnTe and CdTe

被引：0
|
作者：
Valdna, V
机构：
来源：
DEFECTS IN ELECTRONIC MATERIALS II | 1997年 / 442卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoluminescence and conductivity of doped with chlorine and copper ZnTe, Zn(SeTe) and CdTe are investigated. We suppose that interstitial tellurium and complex defects of Te-i with a donor dopant CI can significantly affect the luminescence spectra and conductivity value of ZnTe and CdTe. This assumption is confirmed experimentally. We found that copper dopant in CdTe: Cl can increase the resistivity value of p-type CdTe.
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页码：585 / 591
页数：7
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