Role of carrier and spin in tuning ferromagnetism in Mn and Cr-doped In2O3 thin films

被引：41
|
作者：
Jiang, Feng-Xian [1 ,2 ]
Xu, Xiao-Hong [1 ]
Zhang, Jun [1 ]
Fan, Xiao-Chen [1 ]
Wu, Hai-Shun [1 ,2 ]
Gehring, G. A. [3 ]
机构：
[1] Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China
[2] Taiyuan Univ Technol, Coll Chem & Chem Engn, Taiyuan 030024, Peoples R China
[3] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 05期
关键词：
carrier density; chromium; doping profiles; ferromagnetic materials; indium compounds; magnetic switching; magnetic thin films; magnetisation; manganese; semiconductor doping; semiconductor thin films; semimagnetic semiconductors; tin; ROOM-TEMPERATURE; SEMICONDUCTORS; ORIGIN; ZNO;
D O I：
10.1063/1.3303986
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Mn and Cr-doped In2O3 films with Sn codoping were deposited on sapphire substrate by pulsed laser deposition. The ferromagnetism of Mn-doped In2O3 films shows reversible behavior, which can be switched between "on" and "off" states by controlling the carrier density via varying Sn concentration. The enhanced ferromagnetism in Cr-doped In2O3 films is observed due to the significant increase in the carrier density with Sn doping, and the saturation magnetization can reach 2.10 mu(B)/Cr. Most importantly, both of the experiment results reveal that the carrier density and the net spin are two crucial factors for producing and tuning ferromagnetism.
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页数：3
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