Verilog-A Modeling of Radiation-Induced Mismatch Enhancement

被引：7

作者：

Gorbunov, Maxim S. ^{[1
]}

Danilov, Igor A. ^{[1
]}

Zebrev, Gennady I. ^{[2
]}

Osipenko, Pavel N. ^{[1
]}

机构：

[1] Russian Acad Sci, Sci Res Inst Syst Anal, Computat Engn Dept ORVT, Moscow, Russia

[2] Natl Res Nucl Univ, Moscow Engn Phys Inst, Dept Micro & Nanoelect, Moscow, Russia

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 03期

关键词：

CMOS; mismatch; simulation; SPICE; TID; Verilog-A; BANDGAP REFERENCE CIRCUIT; CMOS TECHNOLOGY; DESIGN; TRANSISTORS; DEVICES; OXIDES;

D O I：

10.1109/TNS.2010.2104162

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Physical model of TID effects is embedded into BSIM3v3 model implemented using Verilog-A. Radiation-induced mismatch enhancement due to the combined action of technology variations and electrical bias difference is demonstrated by simulation. It is shown that the total ionizing dose degradation of circuit components under inequivalent electric field conditions could lead to mismatch of internal circuit parameters, which results in a change to circuit output mismatch parameters.

引用

页码：785 / 792

页数：8

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