Trench termination in Ga2O3-based power device: a simulation-based study

Present work investigates the trench edge termination in Ga2O3-based Schottky diode utilizing SiO2 as a dielectric material. Various models such as Shockley Read Hall (SRH) and Auger recombination, concentration- and field-dependent mobility, Fermi Dirac, and Selberherr impact ionization are considered to optimize device structure. Owing to electric field crowding, the breakdown voltage in unterminated structure is determined as similar to 715 V. For trench-terminated device, the breakdown voltage is found increasing with trench depth and decreasing with trench width. Our results revealed that the optimum value for trench depth and width as 100 nm and 10 mu m, respectively, which gives a breakdown voltage of 1505 V. In addition, the effect of interface charges (positive and negative) on the breakdown voltage is also investigated.