Microprocessor technology challenges through the next decade

被引:0
|
作者
Sery, GE [1 ]
机构
[1] Intel Corp, Santa Clara, CA 95052 USA
来源
关键词
microprocessor trends; transistor scaling; interconnect trends;
D O I
10.1117/12.323968
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Historical microprocessor product trends show an increase in product frequency of 1.25x per year and a transistor count increase of 1.4x per year since the early 70's. This trend is forecast to continue over the next decade to the 0.07 mu m generation. To support the trend, challenges in lithography, transistor definition, interconnect system, and manufacturability must be overcome. Solutions to the lithography challenge, will require successful implementation of 157nm optical or next generation lithography (NGL). The transistor solution will require integration of sub 2.0nm gate oxides with improved gate electrode materials, improved low resistance shallow source-drain technology, advanced channel dopant engineering, and operation at or below 1.0v. Interconnect challenges will require support of 10 or more interconnect layers using low resistivity metalization and reduced epsilon dielectric. Manufacturing challenges require support of larger die sizes, integrated at higher technology complexity, while maintaining lowest possible cost.
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页码:2 / 7
页数:2
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