Sublattice-induced symmetry breaking and bandgap formation in graphene

被引：40
|
作者：
Skomski, Ralph [1 ]
Dowben, P. A. [1 ]
Driver, M. Sky [2 ]
Kelber, Jeffry A. [2 ]
机构：
[1] Univ Nebraska, Dept Phys & Astron, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA
[2] Univ N Texas, Ctr Elect Mat Proc & Integrat, Dept Chem, Denton, TX 76203 USA
来源：
MATERIALS HORIZONS | 2014年 / 1卷 / 06期
基金：
美国国家科学基金会;
关键词：
HEXAGONAL-BORON-NITRIDE; H-BN; LAYER GRAPHENE; EPITAXIAL GRAPHENE; DIRAC FERMIONS; ENERGY BANDGAP; MONOLAYER; GROWTH; GAP; NI(111);
D O I：
10.1039/c4mh00124a
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A reduction of symmetry from C-6v to C-3v leads to the opening of a band gap in the otherwise gapless semiconductor graphene. Simple models provide a fairly complete picture of this mechanism for opening a band gap and in fact can be discussed in terms of the tight-binding approximation, accurately resolving the wave-vector space to a very high accuracy. This picture is consistent with experiments that yield a band gap due to A and B graphene-site symmetry breaking due to substrate interactions.
引用
收藏
页码：563 / 571
页数：9
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