Photoresponsive n-channel organic field-effect transistors based on a tri-component active layer

被引:11
|
作者
Fu, Li-Na [1 ,2 ]
Leng, Bing [2 ]
Li, Yong-Sheng [1 ]
Gao, Xi-Ke [2 ]
机构
[1] East China Univ Sci & Technol, Sch Mat Sci & Engn, Lab Low Dimens Mat Chem, Minist Educ,Key Lab Ultrafine Mat, Shanghai 200237, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Organ Chem, Key Lab Synthet & Self Assembly Chem Organ Funct, Shanghai 200032, Peoples R China
基金
中国国家自然科学基金;
关键词
Organic field-effect transistors; Photoresponse; n-Type organic semiconductor; Spiropyran; Polystyrene; THIN-FILM TRANSISTORS; HIGH-PERFORMANCE; PHOTOCHROMIC SYSTEMS; SEMICONDUCTORS; MOBILITY; MOLECULES;
D O I
10.1016/j.cclet.2017.05.014
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Introducing photochromic molecules into the active layer of organic field-effect transistors (OFETs) is a direct way to implement a photoresponse nature in OFETs. However, active layer blended photo responsive transistors based on n-type semiconductors are challenging and rarely studied, which are crucial for multifunctional organic-based logic applications. Herein, we fabricated n-channel photo responsive OFETs based on a tri-component active layer spin-coated from the mixed solution of an n-type semiconductor (NDI2OD-DTYM2), spiropyran and polystyrene with a Weight ratio of 1:1:1. The morphology of the blended films was improved by the introduction of the polymer matrix. Photochromic spiropyran molecules dispersed in the semiconductor layer could switch between the closed-ring state and ionic open-ring state flexibly under the irradiation of different wavelengths of light, and thus change the channel conductivity reversibly and modulate the OFET characteristics. Therefore, under the irradiation of alternate UV and vis light, both the device carrier mobility and current on and off ratio successfully realized a reversible switch. (C) 2017 Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences. Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:175 / 178
页数:4
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