Mismatch modeling and simulation -: A comprehensive approach

被引：17
|
作者：
Grünebaum, U
Oehm, J
Schumacher, K
机构：
[1] ZKOM GmbH, Dortmund, Germany
[2] Infineon AG, Dusseldorf, Germany
[3] Univ Dortmund, Dept Elect, D-44221 Dortmund, Germany
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2001年 / 29卷 / 03期
关键词：
mismatch; simulation; modeling; correlations; fourier transform;
D O I：
10.1023/A:1011209313352
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This article describes a comprehensive approach to mismatch simulation and modeling as needed for integrated circuit design. Local device mismatch as well as global process variations and parameter correlations are regarded. A method for mismatch modeling based on spatial frequencies is described, which enables to overcome insufficiencies of the first order models. Measurement results are presented to demonstrate the achieved modeling precision. All models and methods mentioned here are commercially available in the simulation tool GAME (General Analysis of Mismatch Effects) which is used in the semiconductor industry since 1998.
引用
收藏
页码：165 / 171
页数：7
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