Theoretical analysis of lateral modes in broad-area semiconductor lasers with profiled reflectivity output facets

被引：6

作者：

Szymanski, M ^{[1
]}

Kubica, JM

Szczepanski, P

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[2] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

[3] Inst Natl Telecommun, PL-01894 Warsaw, Poland

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2001年 / 37卷 / 03期

关键词：

broad-area semiconductor lasers; laser cavity resonators; laser modes;

D O I：

10.1109/3.910454

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper provides a theoretical analysis of the near-threshold behavior of broad-area lasers with profiled reflectivity output facets. Threshold currents and far-field patterns of the lateral modes are calculated according to two models. The first model assumes that the modes are determined by the effective lateral waveguide, while the second one is based on the modes of an open resonator. Single- and three-stripe mirror configurations have been considered. The main goal of the analysis is to identify the lateral guiding mechanism in such lasers and to assess the influence of the mirror configuration on thresholds for single- and multimode operation and on beam characteristics.

引用

页码：430 / 438

页数：9

共 50 条

[1] Improvement of the lateral-mode discrimination of broad-area diode lasers with a profiled reflectivity output facet
Stryckman, D
Rousseau, G
DAuteuil, M
McCarthy, N
APPLIED OPTICS, 1996, 35 (30): : 5955 - 5959
[2] Improvement of the lateral-mode discrimination of broad-area diode lasers with a profiled reflectivity output facet
Universite Laval, Laval, Canada
Appl Opt, 30 (5955-5959):
[3] Broad-area semiconductor lasers with spatially modulated reflectivity of the mirrors
Inst of Electron Technology, Warszawa, Poland
Electron Lett, 4 (329-330):
[4] Broad-area semiconductor lasers with spatially modulated reflectivity of the mirrors
Mroziewicz, B
ELECTRONICS LETTERS, 1996, 32 (04) : 329 - 330
[5] Mode locking of lateral modes in broad-area semiconductor lasers by subharmonic optical pulse injection
Kaiser, J
Fischer, I
Elsässer, W
APPLIED PHYSICS LETTERS, 2006, 88 (10)
[6] Theoretical analysis of broad-area semiconductor lasers with laterally shifted modal reflectors
Szymanski, M
OPTICAL AND QUANTUM ELECTRONICS, 2003, 35 (02) : 147 - 160
[7] Theoretical analysis of broad-area semiconductor lasers with laterally shifted modal reflectors
Michał Szymański
Optical and Quantum Electronics, 2003, 35 : 147 - 160
[8] Spatial modes in broad-area semiconductor lasers with inhomogeneously reflecting mirror
Szymanski, M.
Szczepanski, P.
Electron Technology (Warsaw), 1997, 30 (04): : 310 - 313
[9] Structure, stability, and spectra of lateral modes of a broad-area semiconductor laser
Blaaberg, Soren
Petersen, Paul Michael
Tromborg, Bjarne
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (11-12) : 959 - 973
[10] Current profiling in broad-area semiconductor lasers
Voignier, V
Sailliot, C
Houlihan, J
O'Callaghan, JR
Wu, G
Huyet, G
McInerney, JG
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES X, 2002, 4646 : 336 - 343

← 1 2 3 4 5 →